gate voltage中文是什么意思

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用"gate voltage"造句"gate voltage"怎么读"gate voltage" in a sentence

中文翻译手机版

场效应晶体管栅压
触发电压
控制极电压
门电压
栅电压
栅压

"gate"中文翻译 gate2 n. 1.〔古语〕街道，路〔一般 ...
"voltage"中文翻译 n. 【电学】电压，电压量，伏特数。 the worki ...
"drain gate breakdown voltage" 中文翻译 : 漏栅极击穿电压
"gate nontrigger voltage" 中文翻译 : 栅极不启动电压
"gate pinch-off voltage" 中文翻译 : 栅夹断电压
"gate trigger voltage" 中文翻译 : 闸触发器电压
"gate turn off voltage" 中文翻译 : 闸门电路断开电压
"gate turn-off voltage" 中文翻译 : 闸遮断电压
"gate-to-source voltage" 中文翻译 : 栅极
"maximum gate voltage" 中文翻译 : 最大门电压
"minus gate voltage" 中文翻译 : 负栅压
"peak reverse gate voltage" 中文翻译 : 峰值反向门电压
"reverse gate voltage" 中文翻译 : 逆门极电压
"trigger gate voltage" 中文翻译 : 触发控制极电压; 触发选通脉冲电压
"voltage controlled gate module" 中文翻译 : 电压控制门组件
"voltage sensitive gate" 中文翻译 : 电压敏感门
"forward gate to source breakdown voltage" 中文翻译 : 正向栅源击穿电压
"forward gate-to-source breakdown voltage" 中文翻译 : 正向栅源击穿电压
"zero gate voltage source current" 中文翻译 : 零栅电压源电流
"-gate" 中文翻译 : comb. f. “…门”〔表示丑闻之意，源出Watergate〕;Whitewatergate白水丑闻。
"and gate" 中文翻译 : 和门; 与电路; 与门，[台]及闸; 与门，[台]与门; 与门，与门
"and not gate" 中文翻译 : 及反闸; 禁止门
"and not-gate" 中文翻译 : 与非门; 禁止门
"and or not gate" 中文翻译 : 与或非门
"and-not gate" 中文翻译 : 与非门; 禁止门,“与-非”门

例句与用法

In chapter three , we re - solve the set of linear equations in chapter two after applying gate voltages to gate capacitors
第三章在给各门电容加上门电压后重解了第二章中的线性方程组。
Quasi - static capacitance has been measured , when drain voltage is 0v , and gate voltage changes from ? 5v to 0v , the surface peak
采用应力测试方法,获得了algan / ganhemt漏极电流随时间的变化。
Slowly - drop gate voltage and softly turn - off principles are explained in this article , specific parameters are also listed
摘要阐述了软降栅压和软关断的过电流保护原理，列出具体的保护时序参数。
It hints us that , by modulating the gate voltages we can get effective control over charge solitons in a tunnel junction array
这启发我们通过调节门电压可以实现对结链中的电荷孤子进行有效控制。
An hfo2 layer with less than 3 . 5nm eot was obtained and show good electrical properties . the gate leakage current at a gate voltage bias of iv is less than 10 - 7 a / cm2
研究显示，溅射氛围中增加氧分压和在氧气氛退火有助于减小hfo _ 2栅介质的漏电流。
We can obtain the trap density by measuring the change of gate voltage of mos capacitance under constant current stress and the change of high frequency c - v curve before and after the stress
该方法根据电荷陷落的动态平衡方程，测量恒流应力下mos电容的栅电压变化曲线和应力前后的高频cn曲线变化求解陷阶密度。
A particular over - current protection and drive circuit is given , the impact of resistance between gate and emitter on gate voltage dropping is discussed , and an adjustable gate - emitter resistance circuit is put forward
设计了过电流保护驱动电路，讨论了栅射集电阻对降栅压过程的影响，并提出一种可变栅射集电阻电路。
In this paper , a precise cmos bandgap voltage reference which uses the difference of mos source - gate voltage to perform efficient curvature compensation is described in detail , which is compatible with standard digital cmos process
论文详细描述了一个运用标准数字cmos工艺实现的、采用mos管的栅源电压差进行有效的温度曲率补偿的带隙基准电压源电路的设计。
The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
详细地分析了工作温度、栅极电压、漏源电压和磁场对其特性的影响，观测到明显的库仑阻塞效应和单电子隧穿效应，器件的工作温度可达到77k以上。
The structure of field emission triode is first simulated by magic . the tip height , tip position , tip curvature , gate aperture , and gate voltage are changed , to observe the emission current and the electron congregation
本课题首先采用magic软件对三极管结构的尖锥场发射阴极进行了模拟计算,分别改变尖锥高度,锥尖位置,尖锥曲率半径,栅极孔径及栅极电压,观察阳极收集电流及电子束的会聚情况。